Lithography for manufacturing at 0.25 Micrometer and Below

Lithography for manufacturing at 0.25 Micrometer and Below

著者名:

掲載資料名:

Crucial issues in semiconductor materials and processing technologies

シリーズ名:

NATO ASI series. Series E, Applied sciences

シリーズ巻号:

222

発行年:

1992

開始ページ:

153

終了ページ:

166

総ページ数:

14

出版情報:

Dordrecht: Kluwer Academic Publishers

ISSN:

0168132X

ISBN:

9780792320036 [0792320034]

言語:

英語

請求記号:

N11482/222

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019636
シリーズID:	PA00000018
会議名:	NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies
回次:	1991
会議開催地:	Erice, Italy
会議開催年:	1991.07.01-1991.07.13

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2 国際会議録 Resist contrast requirement for sub-0.25-µm lithography J.Z.Y. Guo, A.E. Novembre, H.M. Marchman, J.A. Abate, J. Frackoviak Society of Photo-optical Instrumentation Engineers	8 国際会議録 Beyond k1=0.25 lithography: 70-nm L/S patterning using KrF scanners Ebihara, T., Levenson, M.D., Liu, W., He, J., Yeh, W., Ahn, S., Oga, T., Shen, M., M'saad, H. SPIE - The International Society of Optical Engineering
3 国際会議録 Optimizing 0.25-µm lithography using confocal microscopy R.E. Colgan, H.M. Marchman Society of Photo-optical Instrumentation Engineers	9 国際会議録 Migrating deep-UV lithography to the 0.25-ｦﾌm regime:issues and outlook Orvek,K.J., Dass,S.K., Gruber,L., Dumford,S.A., Piasecki,M., Pollard,G.W., Fink,I.D. SPIE-The International Society for Optical Engineering
4 国際会議録 Double patterning with multilayer hard mask shrinkage for sub-0.25 k1 lithography H. J. Liu, W. H. Hsieh, C. H. Yeh, J. S. Wu, H. W. Chan, W. B. Wu, F. Y. Chen, T. Y. Huang, C. L. Shih, J. P. Lin SPIE - The International Society of Optical Engineering	10 国際会議録 Scaling self-aligned contacts for 0.25ｦﾌ m and below Perera,A., Pfiester,J.R., Lii,T., Feng,C., Bhat,M., Dao,T., Molloy,J., Blackwell,M., J. Cecil, SPIE-The International Society for Optical Engineering
5 国際会議録 Antireflection coating process characterization and improvement for DUV lithography at 0.25 µm: ground rules J.L. Sturtevant, M. Chaara, R. Elliot, L.D. Hollifield, R.A. Soper Society of Photo-optical Instrumentation Engineers	11 国際会議録 0.25-ｦﾌm logic manufacturability using practical 2D optical proximity correction Kling,M.E., Lucas,K.D., Reich,A., Roman,B.J., Chuang,H., Gilbert,P.V., Grobman,W.D., Travis,E.O., Tsui,P., Vuong,T., … SPIE-The International Society for Optical Engineering
6 国際会議録 Optical proximity effects correction at 0.25ｦﾌm incorporating process variations in lithography Tritchkov,A., Rieger,M.L., Stirniman,J.P., Yen,A., Ronse,K., Vandenberghe,G., hove,L.Van den SPIE-The International Society for Optical Engineering	12 国際会議録 HIGH PERFORMANCE 0.5 AND 0.25 μm GATE GaAs MESFET GROWN BY MOCVD USING TERTIARYBUTYLARSINE Sundaram, V.S., Mao, B.-Y., Zurek, S.J., Levy, H.M., Lee, G.Y., Fraas, L.M. Materials Research Society

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