Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100-nm gate fabrication

Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100-nm gate fabrication

著者名:

Kim,K. ( Texas Instruments Inc. )
Mason,M.E.
Randall,J.N.
Kim,W.D.

掲載資料名:

Optical microlithography XIII : 1-3 March 2000, Santa Clara, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4000

発行年:

2000

巻:

Part1

開始ページ:

132

終了ページ:

148

出版情報:

Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819436184 [0819436186]

言語:

英語

請求記号:

P63600/4000

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019438
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Optical microlithography
回次:	2000 : 13th
会議開催地:	Santa Clara, CA, USA
会議開催年:	2000.03.01-2000.03.03

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4 国際会議録 Alternating PSM phase defect printability for 100-nm KrF lithography Kim,J., Mo,W.-P., Gordon,R.L., Williams,A. SPIE - The International Society for Optical Engineering	10 国際会議録 100-nm alternating PSM structure discussion for ArF lithography Morikawa,Y., Kokubo,H., Nara,M., Miyashita,H., Hayashi,N. SPIE-The International Society for Optical Engineering
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