Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer

Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer

著者名:

Choi, W. J.

掲載資料名:

Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

607

発行年:

2000

開始ページ:

515

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995154 [1558995153]

言語:

英語

請求記号:

M23500/607

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019432
シリーズID:	PA00000011
会議名:	Infrared Applications of Semiconductors : Symposium
回次:	3rd
会議開催地:	Boston, MA, USA
会議開催年:	1999.11.29-1999.12.02

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