Influence of Donor, Acceptor, and Isovalent Impurity Doping on Arsenic Excess and Point Defects in Low-Temperature Grown GaAs

Influence of Donor, Acceptor, and Isovalent Impurity Doping on Arsenic Excess and Point Defects in Low-Temperature Grown GaAs

著者名:

Chaldyshev, V. V.

Kunitsyn, A. E.

Faleev, N. N.

Preobrazhenskii, V. V.

掲載資料名:

Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

442

発行年:

1997

開始ページ:

491

出版情報:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993464 [1558993460]

言語:

英語

請求記号:

M23500/442

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019374
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

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