Hot Carrier Degradation of Gain in Bipolar Transistors

Hot Carrier Degradation of Gain in Bipolar Transistors

著者名:

掲載資料名:

Materials reliability in microelectronics V : symposium held April 17-21, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

391

発行年:

1995

開始ページ:

11

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992948 [1558992944]

言語:

英語

請求記号:

M23500/391

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019370
シリーズID:	PA00000011
会議名:	Symposium on materials reliability in microelectronics
回次:	5th
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.21

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