Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3-to 1.55-ｦﾌm wavelength range

Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3-to 1.55-ｦﾌm wavelength range

著者名:

Huang,F.F.Y. ( Univ.of California/Los Angeles )
Chu,M.
Wang,K.L.
Trinh,P.D.
Jalali,B.

掲載資料名:

Silicon-Based Monolithic and Hybrid Optoelectronic Devices

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3007

発行年:

1997

開始ページ:

68

終了ページ:

73

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819424181 [0819424188]

言語:

英語

請求記号:

P63600/3007

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019359
シリーズID:	PA00000029
会議名:	Photonics West : Silicon-Based Monolithic and Hybrid Optoelectronic Device
回次:	1997
会議開催地:	San Jose, CA, USA
会議開催年:	1997.02.13

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