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Electroluminescence of 111-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN

著者名:
Saxler,A.
Kim,K.S.
Walker,D.
Kung,P.
Zhang,X.
Brown,G.J.
Mitchel,W.C.
Razeghi,M.
さらに 3 件
掲載資料名:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
シリーズ名:
Materials science forum
シリーズ巻号:
258-263
発行年:
1997
巻:
Part2
開始ページ:
1229
終了ページ:
1234
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497881 [0878497889]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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