Uniaxial-stress symmetry studies on the E1,E2 and E3 irradiatron induced defects in gallium arsenide

Uniaxial-stress symmetry studies on the E1,E2 and E3 irradiatron induced defects in gallium arsenide

著者名:

掲載資料名:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

シリーズ名:

Materials science forum

シリーズ巻号:

258-263

発行年:

1997

巻:

Part2

開始ページ:

1027

終了ページ:

1032

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497881 [0878497889]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019291
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS
回次:	19th
会議開催地:	Aveiro, Portugal
会議開催年:	1997.07.00

類似資料:

1 国際会議録 Direct Evidence for Gallium Defect Annealing near 280K in N-GaAs and N-Al0.22.22Ga0.78As Irvine,A.C., Palmer,D.W., Roberts,J.S. Trans Tech Publications	7 国際会議録 Irradiation-induced electronic levels removed in the 280K defect-annealing stage of n-GaAs Siyanbola,W.O., Irvine,A.C., Palmer,D.W. Trans Tech Publications
2 国際会議録 Gallium-arsenide electron-bombarded CCD technology Aebi, V. W., Costello, K. A., Edgecumbe, J. P., Boyle, J. J., Robbins, W. L., Bell, R., Burt, D., Harris, A., Palmer, … SPIE - The International Society of Optical Engineering	8 国際会議録 LUMINESCENCE FROM DEFECTS AND IMPURITY CENTERS IN Y2O3 Jahan, M.S., Cooke, D.W., Bennett, B.L., Hults, W.L., Maez, M.A., Ott, K.C., Smith, J.L. Materials Research Society
3 国際会議録 GROWTH OF GALLIUM ARSENIDE ON SILICON IN MASKED, ETCHED TRENCHES Adkisson, J.W., Kamins, T.I., Koch, G.M., Harris, Jr., J.S., Rosner, S.J., Nauka, K., Reid, G.A. Materials Research Society	9 国際会議録 Erbium-related defects in gallium arsenide.(Invited) Peaker,A.R., Coppinger,F., Efeoglu,H., Evans-Freeman,J.H., Maude,D.K., Portal,J.-C., Rutter,P., Sionger,K.E., … Trans Tech Publications
4 国際会議録 ELECTRON HOPPING BETWEEN BOMBARDMENT INDUCED DEFECTS IN GALLIUM ARSENIDE. MAKRAM-EBEID,S., BOHER,P. Trans Tech Publications	10 国際会議録 Local mode spectroscopy and model study for assessing the role of light defects in III-V compound semiconductors Talwar,D.N., Manasreh,M.O., Fischer,D.W., Pearton,S.J., Matous,G. Trans Tech Publications
5 国際会議録 Boundary Migration Induced Plasticity during Recrystallization and Growth under Applied Stress S.J. Kim, Y.G. Cho, D.W. Suh, G.S. Kim, H.N. Han Trans Tech Publications	11 国際会議録 A sharp defect-annealing stage below room temperature in irradiated n-type indium phosphide Canimoglu,A., Palmer,D.W. Trans Tech Publications
6 国際会議録 An EBSD Study of Gallium Arsenide Nanopillars P.P. Camus, J. Shapiro, S.V. Prikhodko Trans Tech Publications	12 国際会議録 BURIED AMORPHOUS LAYER IN GALLIUM ARSENIDE Sengupta, D., Ridgway, M.C., Zemanski, J.M., Johnson, S.T. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12