Equilibrium vacancies in Te-doped GaAs studied by positron annihilation

Equilibrium vacancies in Te-doped GaAs studied by positron annihilation

著者名:

掲載資料名:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

シリーズ名:

Materials science forum

シリーズ巻号:

258-263

発行年:

1997

巻:

Part2

開始ページ:

905

終了ページ:

910

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497881 [0878497889]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019291
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS
回次:	19th
会議開催地:	Aveiro, Portugal
会議開催年:	1997.07.00

類似資料:

1 国際会議録 Vacancy Formation in GaAs under Different Equilibrium Conditions Bondarenko, V., Gebauer, J., Redmann, F., Krause-Rehberg, R. Trans Tech Publications	7 国際会議録 Vacancy Type Defects in GaAs after Electron Irradiation Studied by Positron Lifetime Spectroscopy Polity,A., Nagel,C., Krause-Rehberg,R. Trans Tech Publications
2 国際会議録 Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation Kawasuso, A., Yoshikawa, M., Maekawa, M., Itoh, H., Chiba, T., Redmann, F., Krause-Rehberg, R., Weidner, M., Frank, T., … Trans Tech Publications	8 国際会議録 Investigations of Vacancy Defects in CdTe by Means of Positron Annihilation Polity,A., Abgarjan,Th., Krause-Rehberg,R. Trans Tech Publications
3 国際会議録 Hg Vacancies in Hg1-xCdxTe Studied by Positron Annihilation Krause-Rehberg,R., Abgajan,Th., Polity,A., Neubert,M. Trans Tech Publications	9 国際会議録 Study of the Compensating Centres in GaAs:Te by Positron Annihilation Krause-Rehberg,R., Dlubek,C., Polity,A. Trans Tech Publications
4 国際会議録 Vacancy Defects in Low-Temperature-Grown GaAs Observed by Continuous and Pulsed Slow Positrons Gebauer,J., Krause-Rehberg,R., Eichler,S., Bauer-Kugelmann,W., Kogel,G., Triftshauser,W., Luysberg,M., Sohn,H., … Trans Tech Publications	10 国際会議録 Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs Petters, K., Gebauer, J., Redmann, F., Leipner, H.S., Krause-Rehberg, R. Trans Tech Publications
5 国際会議録 Defect Studies in BaTiO3 Ceramics Using Positron Annihilation Spectroscopy Massoud, A.M., Krause-Rehberg, R., Langhammer, H.T., Gebauer, J., Mohsen, M. Trans Tech Publications	11 国際会議録 Study of Vacancy Defects in II-VI Compouds by Means of Positron Annihilation Krause-Rehberg,R., Drost,Th., Polity,A. Trans Tech Publications
6 国際会議録 Positron annihtlation and scanning tunneling microscopy used to characterise defects in highly Si-doped GaAs.(Invited) Gebauer,J., Krause-Rehberg,R., Domke,C., Ebert,Ph., Urban,K. Trans Tech Publications	12 国際会議録 Spatial Distribution of Vacancy Defects in GaAs:Te Wafers Studied by Positron Annihilation Cavallini,A., Dupasquier,A., Ferro,G., Piqueras,J., Valli,M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12