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Ga vacancies as compensating centers in homogeneously or ｦﾄ-doped GaAs(Si)layers

著者名:
Laine,T.
Saarinen,K.
Hautojarvi,P.
Corbel,C.
Pfeiffer,L.N.
Citrin,P.H.
Ashwin,M.J.
Newman,R.C.
さらに 3 件
掲載資料名:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
シリーズ名:
Materials science forum
シリーズ巻号:
258-263
発行年:
1997
巻:
Part2
開始ページ:
879
終了ページ:
884
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497881 [0878497889]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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