Ga vacancies as compensating centers in homogeneously or ヲト-doped GaAs(Si)layers
- 著者名:
Laine,T. Saarinen,K. Hautojarvi,P. Corbel,C. Pfeiffer,L.N. Citrin,P.H. Ashwin,M.J. Newman,R.C. - 掲載資料名:
- Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 258-263
- 発行年:
- 1997
- 巻:
- Part2
- 開始ページ:
- 879
- 終了ページ:
- 884
- 出版情報:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497881 [0878497889]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Positron Experiments in 5-Doped GaAs(Si)Superlattices:Defect Properties and Positron Diffusion
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