High-frequency EPR studies of shallow and deep boron acceptors in 6H-SiC.(Invited)

High-frequency EPR studies of shallow and deep boron acceptors in 6H-SiC.(Invited)

著者名:

Schmidt,J.

掲載資料名:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

シリーズ名:

Materials science forum

シリーズ巻号:

258-263

発行年:

1997

巻:

Part2

開始ページ:

703

終了ページ:

708

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497881 [0878497889]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019291
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS
回次:	19th
会議開催地:	Aveiro, Portugal
会議開催年:	1997.07.00

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1 国際会議録 High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC Schmidt,J., Matsumoto,T.M., Poiuektov,O.G., Duijn-Arnold,A.van, Ikoma,T., Baranov,P.G., Mokhov,E.N. Trans Tech Publications	7 国際会議録 EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC Ilyin, I.V., Mokhov, E.N., Baranov, P.G. Trans Tech Publications
2 国際会議録 The Electronic Structure of the Be Acceptor Centers in 6H-SiC Duijn-Arnold, A. v., Schmidt, J., Poluektov, O. G., Baranov, P. G., Mokhov, E. N. Trans Tech Publications	8 国際会議録 Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition Muzafarova, M. V., Ilyin, I. V., Mokhov, E. N., Baranov, P. G., Ber, B. Ya., Ionov, A. N., Kop'ev, P. S., Kaliteevskii, … Trans Tech Publications
3 国際会議録 The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC Duijn-Arnold, A. v., Mol, J., Verberk, R., Schmidt, J., Mokhov, E. N., Baranov, P. G. Trans Tech Publications	9 国際会議録 Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold von Bardeleben, H.J., Cantin, J.L., Baranov, P.G., Mokhov, E.N. Trans Tech Publications
4 国際会議録 Phosphorus-Related Shallow and Deep Defects in 6H-SiC Baranov, P.G., Ilyin, I.V., Mokhov, E.N., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications	10 国際会議録 X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide Hofstaetter,A., Meyer,B.K., Scharmann,A., Baranov,P.G., Ilyin,I.V., Mokhov,E.N. Trans Tech Publications
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6 国際会議録 The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC van Duijn-Arnold, A., Zondervan, R., Baranov, P.G., Mokhov, E.N., Schmidt, J. Trans Tech Publications	12 国際会議録 Electronic Structure of Acceptors in Silicon Carbide Baranov,P.G. Trans Tech Publications

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