A deep photoluminescence band in 4H SiC related to the silicon vacancy

A deep photoluminescence band in 4H SiC related to the silicon vacancy

著者名:

Sorman,E.

掲載資料名:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

シリーズ名:

Materials science forum

シリーズ巻号:

258-263

発行年:

1997

巻:

Part2

開始ページ:

685

終了ページ:

690

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497881 [0878497889]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019291
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS
回次:	19th
会議開催地:	Aveiro, Portugal
会議開催年:	1997.07.00

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4 国際会議録 Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC Zolnai, Z., Son, N.T., Magnusson, B., Hallin, C., Janzen, E. Trans Tech Publications	10 国際会議録 Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance Son, N.T., Hallin, C., Janzen, E. Trans Tech Publications
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