Blank Cover Image

High temperature NMR study of intrinsic defects in GaAs

著者名:
掲載資料名:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
シリーズ名:
Materials science forum
シリーズ巻号:
83-87
発行年:
1992
巻:
Pt.2
開始ページ:
971
終了ページ:
978
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 NMR Study of Impurity Electronic Structure and Dynamics

Warren,W.W.Jr., Fuller,S.E., Gobel,A., Bindley,U., Furdyna,J.K.

Trans Tech Publications
7 国際会議録 LOW-TEMPERATURE DEFECT-INDUCED AGING OF GaAs GROWN BY MOLECULAR BEAM EPITAXY

Szafranek, I., Stockman, S. A., Szafranek, M., McCollum, M. J., Plano, M. A., Miller, W. R., Stillman, G. E.

Materials Research Society
2 国際会議録 The Interaction of Rh with Intrinsic Defects of Reduced Rh/CeO2 Catalysts: A Comparative XPS/UPS and 1H-NMR Study

Pfau, A., Sanz, J., Schierbaum, K. D., Gopel, W., Belzunegui, J. P., Rojo, J. M.

Elsevier
8 国際会議録 Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC

Sridhara, S.G., Carlsson, F.H.C., Bergman, J.P., Henry, A., Janzen, E.

Trans Tech Publications
3 国際会議録 *INTRINSIC DEFECTS IN GaAs - THE CASE OF EL2

von Bardeleben, H. J., Stievenard, D.

Materials Research Society
9 国際会議録 NMR study of carrier states and trapping complexes in the transparent conductor ZnO:MIII

Jr,W.W.Warren, Roberts,N., Wang,R.-P., Sleight,W.

Trans Tech Publications
4 国際会議録 High temperature NMR of zeolites

Janssen, R., Dols, P. P. M. A., Tijink, G. A. H., Veeman, W. S.

Elsevier
10 国際会議録 Intrinsic defects in electron irradiated p-type GaAs

Jia,Y.Q., Bardeleben,H.J.von, Stievenard,D., Delerue,C.

Trans Tech Publications
5 国際会議録 High Temperature Nanoindentation for the Study of Flow Defects

Schuh, C. A., Mason, J. K., Lund, A. C., Hodge, A. M.

Materials Research Society
11 国際会議録 Oxygen Exchange at the Si/SiO2 Interface and Defect Creation Associated with High-Temperature Process Steps

Dcvine, R.A.B., Mathiot, D., Warren, W.L.

Electrochemical Society
6 国際会議録 On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps

B. Zippelius, J. Suda, T. Kimoto

Trans Tech Publications
12 国際会議録 H Interacting with Intrinsic Defects in Si

Nielsen,B.Bech, Hoffmann,L., Budde,M., Jones,R., Goss,J., Oberg,S.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12