Vacancy in the metastable state of the EL2 defect in GaAs

Vacancy in the metastable state of the EL2 defect in GaAs

著者名:

掲載資料名:

Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991

シリーズ名:

Materials science forum

シリーズ巻号:

83-87

発行年:

1992

巻:

Pt.2

開始ページ:

923

終了ページ:

928

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496280 [0878496289]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019283
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors
回次:	16th
会議開催地:	Bethlehem, PA, USA
会議開催年:	1991.07.22-1991.07.26

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2 国際会議録 Vacancy Defects in GaAs and AlGaAs Studied by Positron Spectroscopy under Photoexcitation Saarinen,K., Makinen,J., Hautojarvi,P., Kuisma,S., Laine,T., Corbel,C., LeBerre,C. Trans Tech Publications	8 国際会議録 Study of Indium Implanted GaAs:Positron Annihilation and Electrical Measurements Pfeiffer,W., Liszkay,L., Burchard,A., Deicher,M., Magerle,R., Ronning,C., Saarinen,K., Hautojarvi,P. Trans Tech Publications
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