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Hydrogen passivation of shallow and deep centers in GaSb

著者名:
Polyakov,A.Y.
Pearton,S.J.
Wilson,R.G.
Rai-Choudhury,P.
Hillard,R.J.
Bao,X.J.
Stam,M.
Milnes,A.G.
Schlesinger,T.E.
さらに 4 件
掲載資料名:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
シリーズ名:
Materials science forum
シリーズ巻号:
83-87
発行年:
1992
巻:
Pt.2
開始ページ:
623
終了ページ:
628
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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