Blank Cover Image

Passivation of shallow acceptors in Si and GaAs by annealing in H2

著者名:
Veloarisoa,I.A.
Kozuch,D.M.
Stavola,M.
Peale,R.E.
Watkins,G.D.
Pearton,S.J.
Abernathy,C.R.
Hobson,W.S.
さらに 3 件
掲載資料名:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
シリーズ名:
Materials science forum
シリーズ巻号:
83-87
発行年:
1992
巻:
Pt.1
開始ページ:
111
終了ページ:
118
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Unintentional hydrogenation of III-V semiconductors during device processing

Pearton,S.J., Abernathy,C.R., Hobson,W.S., Chakrabarti,U.K., Lopata,J., Kozuch,D.M., Stavola,M.

Trans Tech Publications
7 国際会議録 Effect of Annealing on GaAs:C, AlxGa1-xAs:C, and AlAs: Grown by Metalorganic Molecular Beam Epitaxy

MacKenzie, J.D., Abernathy, C.R., Pearton, S.J., Chu, S.N.G., Hobson, W.S.

Electrochemical Society
2 国際会議録 *HYDROGEN PASSIVATION OF GaAs:C EPITAXIAL LAYERS GROWN FROM METALORGANIC SOURCES

Stavola, Michael, Kozuch, D. M., Abernathy, C. R., Hobson, W. S.

Materials Research Society
8 国際会議録 HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVD GROWN GaAs/InP

Swaminathan, V., Chakrabarti, U.K., Hobson, W.S., Caruso, R., Lopata, J., Pearton, S.J.

Materials Research Society
3 国際会議録 ACCEPTOR DELTA-DOPING IN GaAs

Hobson, W.S., Pearton, S.J., Abernathy, C.R., Cabaniss, G.

Materials Research Society
9 国際会議録 GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD

Hobson, W.S., Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M., Jacobson, D.C., Abernathy, C.R., Caruso, R.

Materials Research Society
4 国際会議録 Sn-H COMPLEX IN HYDROGEN PASSIVATED GaAs

Kozuch, D.M., Stavola, Michael J., Pearton, S.J., Abernathy, C.R., Lopata, J.

Materials Research Society
10 国際会議録 REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2

Ren, F., Pearton, S.J., Lothian, J.R., Abernathy, C.R., Hobson, W.S.

Materials Research Society
5 国際会議録 *FERMI RESONANCE EFFECTS ON THE VIBRATION MODES OF HYDROGEN-PASSIVATED BORON IN SILICON

Watkins, G.D., Fowler, W.B., Deleo, G.G., Stavola, M., Kozuch, D.M., Pearton, S.J., Lopata, J.

Materials Research Society
11 国際会議録 Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source

Hobson,W.S., McAfee,S.R., Jones,K.S., Paroskevopoulos,N.C., Abernathy,C.R., Sputz,S.K., Harris,T.D., Schnoes,M.Lamont, …

Trans Tech Publications
6 国際会議録 Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems

Hays, D., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S.

Electrochemical Society
12 国際会議録 ACCEPTOR DELTA-DOPING FOR SCHOTTKY BARRIER ENHANCEMENT ON n-TYPE GaAs

Pearton, S. J., Ren, F., Abernathy, C. R., Katz, A., Hobson, W. S., Chu, S. N. G., Kovalchick, J.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12