Blank Cover Image

Preparation of oriented GaAs bicrystal layers by vapor-phase epitaxy using lateral overgrowth

著者名:
Salerno, Jack P. ( Lincoln Laboratory, Massachusetts Institute of Technology )
McClelland, R.W. ( Lincoln Laboratory, Massachusetts Institute of Technology )
Vohl, P. ( Lincoln Laboratory, Massachusetts Institute of Technology )
Fan, John C.C. ( Lincoln Laboratory, Massachusetts Institute of Technology )
Macropoulos, W. ( Lincoln Laboratory, Massachusetts Institute of Technology )
Bozler, C.O. ( Lincoln Laboratory, Massachusetts Institute of Technology )
Witt, A.F. ( Department of Materials Science and Engineering, Massachusetts Instiute of Technology )
さらに 2 件
掲載資料名:
Grain boundaries in semiconductors : proceedings of the Materials Research Society annual meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposia proceedings
シリーズ巻号:
5
発行年:
1982
開始ページ:
77
終了ページ:
82
出版情報:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444006974 [0444006974]
言語:
英語
請求記号:
M23500/5
資料種別:
国際会議録

類似資料:

1 国際会議録 ELECTRONIC PROPERTIES OF GRAIN BOUNDARIES IN GaAs: A STUDY OF ORIENTED BICRYSTALS PREPARED BY EPITAXIAL LATERAL OVERGROWTH

Salerno, J. P., McClelland, R. W>, Mavroides, J. G.,, Fan, J. C. C., Witt, A. F.

North-Holland
7 国際会議録 Metal organic vapor phase epitaxy of GaN and lateral overgrowth

Beaumont,B., Gibart,P.

SPIE - The International Society for Optical Engineering
2 国際会議録 Scanning cathodoluminescence microscopy of polycrystalline GaAs

Salerno, Jack P., Gale, Roland P., Fan, John C.C., Vaughan, John

North Holland
8 国際会議録 Epitaxial Lateral Overgrowth of GaN With Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

Zhang, R., Zhang, L., Hansen, D. M., Boleslawski, M. P., Chen, K. L., Lu, D. Q., Shen, B., Zheng, Y. D., Kuech, T. F.

MRS - Materials Research Society
3 国際会議録 SIX-INCH DIAMETER GaAs ON Si WAFERS

Salerno, Jack P., Hill, D.S., Lee, J.W., McCullough, R.E., Fan, John C.C.

Materials Research Society
9 国際会議録 Lateral Polarity Heterostructures By Overgrowth Of Patterned AlxGa1-xN Nucleation Layers

Dimitrov, Roman, Tilak, V., Murphy, M., Schaff, W.J., Eastman, L.F., Lima, A.P., Miskys, C., Ambacher, O., Stutzmann, M.

Materials Research Society
4 国際会議録 Dot Pattem Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy.

Liu, W.Y., Tsay, J.D., Guo, Y.D., Liu, H.P., Yeh, R.C.

Electrochemical Society
10 国際会議録 Beam annealing of ion-implanted GaAs and InP

Fan, J.C.C., Chapman, R.L., Donnelly, J.P., Turner, G.W., Bozler, C.O.

North Holland
5 国際会議録 *EPITAXY OF GaAs ON Si : MBE AND OMCVD

Lee, J. W., Salerno, J. P., Gale, R. P., Fan, J. C. C.

Materials Research Society
11 国際会議録 Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor-Phase Epitaxy

Tsuchiya, H., Sunaba, K., Yonemura, S., Suemasu, T., Hasegawa, F.

MRS - Materials Research Society
6 国際会議録 Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy

Kuan, T. S., Inoki, C. K., Hsu, Y., Harris, D. L., Zhang, R., Gu, S., Kuech, T. F.

MRS-Materials Research Society
12 国際会議録 Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN Layers

Nam, O. H., Zheleva, T. S., Bremser, M. D., Thomson, D. B., Davis, R. F.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12