Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

著者名:

Osinski,M. ( Ctr.for High Technology Materials/Univ.of New Mexico )

掲載資料名:

Design, fabrication, and characterization of photonic devices : 30 November-3 December 1999, Singapore

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3896

発行年:

1999

開始ページ:

86

終了ページ:

97

出版情報:

Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434982 [0819434981]

言語:

英語

請求記号:

P63600/3896

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019022
シリーズID:	PA00000029
会議名:	International Symposium on Photonics and Applications : Design, fabrication, and characterization of photonic devices
回次:	1999
会議開催地:	Singapore
会議開催年:	1999.11.30-1999.12.03

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