Physically based model for predicting volume shrinkage in chemically amplified resists

Physically based model for predicting volume shrinkage in chemically amplified resists

著者名:

Jakatdar,N.H. ( Univ.of California/Berkeley )

掲載資料名:

In-line characterization, yield reliability, and failure analysis in microelectronics manufacturing : 19-21 May 1999, Edinburgh, Scotland

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3743

発行年:

1999

開始ページ:

16

終了ページ:

24

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819432230 [0819432237]

言語:

英語

請求記号:

P63600/3743

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019008
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing Technologies : In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
回次:	1999
会議開催地:	Edinburgh, Scotland
会議開催年:	1999.05.19-1999.05.21

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