Challenge to 0.13-ｦﾌm device patterning using KrF

Challenge to 0.13-ｦﾌm device patterning using KrF

著者名:

Kim,I.-S. ( Samsung Electronlcs Co Ltd. )

掲載資料名:

Optical microlithography XII : 17-19 March 1999, Santa Clara, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3679

発行年:

1999

巻:

Part2

開始ページ:

872

終了ページ:

881

出版情報:

Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819431530 [0819431532]

言語:

英語

請求記号:

P63600/3679

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019002
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Optical microlithography
回次:	1999 : 12th
会議開催地:	Santa Clara, CA, USA
会議開催年:	1999.03.17-1999.03.19

類似資料:

1 国際会議録 Comparison study for sub-0.13-ｦﾌm lithography between ArF and KrF lithography Kim,S.-K., Kim,Y.-S., Kim,J.-S., Bok,C.-K., Ham,Y.-M., Baik,K.-H. SPIE - The International Society for Optical Engineering	7 国際会議録 Intrafield critical dimension variation using KrF scanner system for 0.18-ｦﾌm lithography Yim,D., Kim,H.-S., Baik,K.-H. SPIE-The International Society for Optical Engineering
2 国際会議録 Evaluation of phase-edge phase-shifting mask for sub-0.18-ｦﾌm gate patterns in logic devices Cha,D.-H., Kye,J.-W., Seong,N.-G., Kang,H.-Y., Cho,H.-K., Moon,J.-T. SPIE-The International Society for Optical Engineering	8 国際会議録 Mask technology for 0.18-ｦﾌm device generation Sohn,J.M., Choi,S.W., Kim,B.G., Cho,H.K., Yoon,H.S. SPIE-The International Society for Optical Engineering
3 国際会議録 Minimization of DUV multi-interference effect in 0.25-ｦﾌm device fabrication Kim,J.H., Moon,S.C., Ko,B.S., Park,J.H., Lee,T.G., Shin,K.S., Kim,D.H. SPIE-The International Society for Optical Engineering	9 国際会議録 Improvement of the resolution and accuracy of chemical-amplification positive resist for 0.13-ｦﾌm reticle fabrication Arai,T., Sakamizu,T., Kasuya,K., Katoh,K., Soga,T., Saitoh,H., Shiraishi,H., Hoga,M. SPIE - The International Society for Optical Engineering
4 国際会議録 Effective OPC pattern generation using chemically amplified resist 0.13-ｦﾌm design rule masks Lee,I.-H., Nam,K.-H., Kim,H.-S. SPIE - The International Society for Optical Engineering	10 国際会議録 Aberration effects in the region of 0.18-ｦﾌm lithography with KrF excimer stepper Yim,D., Lim,C.-M., Kim,H.-S., Baik,K.-H. SPIE-The International Society for Optical Engineering
5 国際会議録 Optical proximity correction considering mask manufacturability and its application to 0.25-ｦﾌm DRAM for enhanced device performance Park,C.-H., Rhie,S.-U., Choi,J.-H., Park,J.-S., Seo,H.-W., Kim,Y.-H., Park,Y.-K., Han,W.-S., Lee,W.-S., Kong,J.-T. SPIE - The International Society for Optical Engineering	11 国際会議録 Robust and fast OPC approach for metal interconnects of 0.13um logic devices Park,J.-S., Kim,D.-H., Park,C.-H., Kim,Y.-H., Yoo,M.-H., Kong,J.-T., Kim,H.-W., Yoo,S.-I. SPIE-The International Society for Optical Engineering
6 国際会議録 0.13-ｦﾌm optical lithography for random logic devices using 248-nm attenuated phase-shifting masks Chen,Y.T., Lin,C.H., Lin,H.T., Hsieh,H.C., Yu,S.S., Yen,A. SPIE - The International Society for Optical Engineering	12 国際会議録 Feasibility of very low k1(=0.31) KrF lithography Kim,I.-S., Kim,B.-S., Lee,J.-H., Cho,H.-K., Moon,J.-T. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12