Optical properties of InGaAsN:a new 1-eV bandgap material system

Optical properties of InGaAsN:a new 1-eV bandgap material system

著者名:

Jones,E.D. ( Sandia National Labs. )

掲載資料名:

Light-emitting diodes : research, manufacturing, and applications III : 27-28 January 1999, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3621

発行年:

1999

開始ページ:

52

終了ページ:

63

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819430915 [0819430919]

言語:

英語

請求記号:

P63600/3621

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018997
シリーズID:	PA00000029
会議名:	Photonics West : Light-Emitting Diodes
回次:	1999 : 3rd
会議開催地:	San Jose, CA, USA
会議開催年:	1999.01.27-1999.01.28

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1 国際会議録 Photoluminescence Investigations of InGaAsN Alloy Lattice-Matched to GaAs Jones, E.D., Modine, N.A., Allerman, A.A., Fritz, I.J., Kurtz, S.R., Wright, A.F., Tozer, S.T., Wei, X. Electrochemical Society	7 国際会議録 MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers Kurtz,S.R., Sieg,R.M., Allerman,A.A., Choquette,K.D., Naone,R.L. SPIE-The International Society for Optical Engineering
2 国際会議録 Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs Jones,E.D., AIlerman,A.A., Kurtz,S.R., Fritz,I.J., Modine,N.A., Sieg,R.M., Bajaj,K.K., Tozer,S.W., Wei,X. SPIE - The International Society for Optical Engineering	8 国際会議録 The Role of Nitrogen-Induced Localization and Defects in InGaAsN (= 2 N):Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor … Kurtz, Steven R., Allerman, A.A., Klem, J.F., Sieg, R.M., Seager, C.H., Jones, E.D. Materials Research Society
3 国際会議録 Next-Generation Thin Films for Photovoltaics: InGaAsN Jones, E.D., Allerman, A.A., Friedman, D.J., Geisz, J.F., Klem, J.F., Kurtz, S.R., Modine, N.R., Shan, W., Tu, C., … Electrochemical Society	9 国際会議録 Comparison Of Deep Level Spectra of MBE- and MOCVD-Grown InGaAsN Kaplar, R.J., Ringel, S.A., Kurtz, Steven R., Allerman, A.A., Klem, J.F. Materials Research Society
4 国際会議録 GaInNAs laser gain Chow,W.W., Jones,E.D., Modine,N.A., Kurtz,S.R., Allerman,A.A. SPIE - The International Society for Optical Engineering	10 国際会議録 Time-resolved photoluminescence studies of InxGa1-xAs1-yNy Smith, M., Mair, R. A., Lin, J. Y., Jiang, H. X., Jones, E. D., Allerman, A. A., Kurtz, S. R. MRS-Materials Research Society
5 国際会議録 Minority-Carrier Lifetimes, Defects, and Solar Cells of InGaAsN, Lattice-Matched to GaAs Kurtz, S.R., Allerman, A.A., Jones, E.D., Klem, J.F., Seager, C.H. Electrochemical Society	11 国際会議録 InAsSb-based midinfrared lasers(3.5 to 3.9 ｦﾌm)and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic … Allerman,A.A., Biefeld,R.M., Kurtz,S.R. SPIE-The International Society for Optical Engineering
6 国際会議録 The Growth of InGaAsN for High-Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition Allerman, A.A., Kurtz, S.R., Jones, E.D., Gee, J.M., Banks, J.C., Climent-font, A. Electrochemical Society	12 国際会議録 Localization, Defect, and Transport Processes in Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition Grown InGaAsN (｀2% N) (Invited) Kurtz, S. R., Allerman, A. A., Klein, J. F., Sieg, R. M., Seager, C. H., Jones, E. D. Electrochemical Society

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