Activation characteristics of donor and acceptor implants in GaN
- 著者名:
Cao, X. A. Pearton, S. J. Singh, R. K. Wilson, R. G. Sekhar, J. A. Zolper, J. C. Han, J. Rieger, D. J. Shul, R. J. Guo, H. J. Pennycook, S. J. Zavada, J. M. - 掲載資料名:
- Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 572
- 発行年:
- 1999
- 開始ページ:
- 513
- 出版情報:
- Warrendale, PA: MRS-Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994799 [1558994793]
- 言語:
- 英語
- 請求記号:
- M23500/572
- 資料種別:
- 国際会議録
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