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Conducting (Si-doped) aluminum nitride epitaxial films grown by molecular beam epitaxy

著者名:
掲載資料名:
Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
572
発行年:
1999
開始ページ:
333
出版情報:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994799 [1558994793]
言語:
英語
請求記号:
M23500/572
資料種別:
国際会議録

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