Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer

Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer

著者名:

Ruvimov, S.

掲載資料名:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

572

発行年:

1999

開始ページ:

295

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

言語:

英語

請求記号:

M23500/572

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018972
シリーズID:	PA00000011
会議名:	Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 : Symposium
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.08

類似資料:

1 国際会議録 TEM/HREM Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire Ruvimov, S., Liliental-Weber, Z., Dieker, C., Washburn, J., Koike, M., Amano, H., Akasaki, I. MRS - Materials Research Society	7 国際会議録 Nanotubes and pinholes in GaN and their formation mechanism Liliental-Weber,Z., Chen,Y., Ruminov,S., Washburn,J. Trans Tech Publications
2 国際会議録 Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE Ruvimov, S., Liliental-Weber, Z., Washburn, J., Drummond, T. J., Hafish, M., Lee, S. R. MRS - Materials Research Society	8 国際会議録 Effect of Si Doping on the Structure of GaN Liliental-Weber, Zuzanna, Ruvimov, S., Suski, T., Ager, J. W., III, Swider, W., Chen, Y., Kisielowski, Ch., Washburn, … MRS - Materials Research Society
3 国際会議録 Role of Dopants and Impurities on Pinhole Formation; Defects Formed at InGaN/GaN and AlGaN/GaN Quantum Wells Liliental-Weber, Z., Ruvimov, S., Swider, W., Kim, Y., Washburn, J., Nakamura, S., Kern, R. S., Chen, Y., Yang, J. W. MRS - Materials Research Society	9 国際会議録 Stress-Controlled MBE Growth of GaN:Mg and GaN:Si Kim, Y., Klockenbrink, R., Kisielowski, C., Kruger, J., Corlatan, D., Sudhir, G. S., Peyrot, Y., Cho, Y., Rubin, M., … MRS - Materials Research Society
4 国際会議録 Improved Heteroepitaxial MBE GaN Growth With A Ga Metal Buffer Layer Kim, Yihwan, Subramanya, Sudhir G., Krueger, Joachim, Siegle, Henrik, Shapiro, Noad, Armitage, Robert, Feick, Henning, … Materials Research Society	10 国際会議録 Comparative Analysis of Strain and Stress in MBE- and MOCVD-Grown GaN Thin films on Sapphire Kruger, Joachim, Sudhir, G. S., Corlatan, Dorina, Cho, Yonah, Kim, Yihwan, Klockenbrink, Ralf, Rouvimov, Sergei, … MRS - Materials Research Society
5 国際会議録 Nanotubes in GaN Liliental-Weber, Z., Chen, Y., Ruvimov, S., Swider, W., Washburn, J. MRS - Materials Research Society	11 国際会議録 TEM study of Mg-doped bulk GaN crystals Liliental-Weber, Z., Benamara, M., Ruvimov, S., Mazur, J. H., Washburn, J., Grzegory, I., Porowski, S. MRS-Materials Research Society
6 国際会議録 TEM Structure Characterization of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts for n-GaN Ruvimov, S., Liliental-Weber, Z., Washburn, J., Duxstad, K. J., Haller, E. E., Fan, Z.-F., Mohammad, S. N., Kim, W., … MRS - Materials Research Society	12 国際会議録 Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source Leung, M. S. H., Klockenbrink, R., Kisielowski, C., Fujii, H., Kruger, J., S., Sudhir G., Anders, A., Liliental-Weber, … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12