On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging

On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging

著者名:

Wellmann, P. J.

掲載資料名:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

572

発行年:

1999

開始ページ:

259

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

言語:

英語

請求記号:

M23500/572

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018972
シリーズID:	PA00000011
会議名:	Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 : Symposium
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.08

類似資料:

1 国際会議録 Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation Wellmann, P. J., Bickermann, M., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T. L., Winnacker, A. Trans Tech Publications	7 国際会議録 Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process Wellmann, P.J., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T.L., Winnacker, A. Trans Tech Publications
2 国際会議録 Study of Boron Incorporation During PVT Growth of p-type SiC Crystals Bickermann, M., Hofmann, D., Rasp, M., Straubinger, T.L., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	8 国際会議録 Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth Selder, M., Kadinski, L., Durst, F., Straubinger, T. L., Hofmann, D., Wellmann, P. J. Trans Tech Publications
3 国際会議録 Stability Criteria for 4H-SiC Bulk Growth Straubinger, T.L., Bickermann, M., Hofmann, D., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	9 国際会議録 Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals Selder, M., Kadinski, L., Durst, F., Straubinger, T.L., Wellmann, P.J., Hofmann, D. Trans Tech Publications
4 国際会議録 Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging Wellmann, P.J., Herro, Z., Straubinger, T.L., Winnacker, A. Trans Tech Publications	10 国際会議録 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Straubinger, T.L., Bickermann, M., Rasp, M., Weingartner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications
5 国際会議録 Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging Wellmann, P.J., Herro, Z., Straubinger, T.L., Winnacker, A. Trans Tech Publications	11 国際会議録 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Straubinger, T.L., Bickermann, M., Rasp, M., Weingartner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications
6 国際会議録 Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions Straubinger, T. L., Bickermann, M., Grau, M., Hofmann, D., Kadinski, L., Muller, S. G., Selder, M., Wellmann, P. J., … Trans Tech Publications	12 国際会議録 Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth Bickermann, M., Hofmann, D., Straubinger, T.L., Weingartner, R., Winnacker, A. Trans Tech Publications

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