*Impurity effects in the growth of 4H-SiC crystals by physical vapor transport

*Impurity effects in the growth of 4H-SiC crystals by physical vapor transport

著者名:

掲載資料名:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

572

発行年:

1999

開始ページ:

245

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

言語:

英語

請求記号:

M23500/572

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018972
シリーズID:	PA00000011
会議名:	Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 : Symposium
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.08

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