Blank Cover Image

Time resolved photoluminescence of cubic Mg doped GaN

著者名:
Seitz, R.
Gaspar, C.
Monteiro, T.
Pereira, E.
Schoettker, B.
Frey, T.
As, D. J.
Schikora, D.
Lischka, K.
さらに 4 件
掲載資料名:
Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
572
発行年:
1999
開始ページ:
225
出版情報:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994799 [1558994793]
言語:
英語
請求記号:
M23500/572
資料種別:
国際会議録

類似資料:

1 国際会議録 Blue emission in Mg doped CaN studied by time-resolved spectroscopy

Seitz,R., Gaspar,C., Monteiro,T., Pereira,E., Leroux,M., Beaumont,B., Gibart,P.

Trans Tech Publications
7 国際会議録 Cathodoluminescence of Cubic GaN Epilayers

Wang,C., As,D.J., Schikora,D., Schottker,B., Lischka,K.

Trans Tech Publications
2 国際会議録 Mechanisms of Optical Gain in Cubic GaN and InGaN

Holst, J., Hoffmann, A., Broser, I., Frey, T., Schottker, B., As, D. J., Schikora, D., Lischka, K.

MRS - Materials Research Society
8 国際会議録 p- and n-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers

As, D. J., Simonsmeier, T., Busch, J., Schottker, B., Lubbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegseis, W., …

MRS - Materials Research Society
3 国際会議録 Depth-Resolved and Excitation Power Dependent Cathodo-luminescence of MBE-Grown Cubic GaN Epilayers

As, D. J., Schottker, C. Wang. B., Schikora, D., Lischka, K.

MRS - Materials Research Society
9 国際会議録 Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si

As, D. J., Richter, A., Busch, J., Schottker, B., Lubbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegseis, W., …

MRS-Materials Research Society
4 国際会議録 Optical Properties of MBE Grown Cubic AlGaN Epilayers and AlGaN/GaN Quantum Well Structures

As, D.J., Frey, T., Bartels, M., Khartchenko, A., Schikora, D., Lischka, K., Goldhahn, R., Shokhovets, S.

Materials Research Society
10 国際会議録 Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on(001)GaAs

Tabata,A., Enderlein,R., Lima,A.P., Leite,J.R., Lemos,V., Kaiser,S., Schikora,D., Schottker,B., Kohler,U., Lischka,K.

Trans Tech Publications
5 国際会議録 Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers

Seitz, R., Gaspar, C., Monteiro, T., Pereira, E., Poisson, M. A., Beaumont, B.

MRS-Materials Research Society
11 国際会議録 An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

Schottker,B., Kuhler,J., As,D.J., Schikora,D., Lischka,K.

Trans Tech Publications
6 国際会議録 Electrical properties of cubic InN and GaN epitaxial layers as function of temperature

Fernandez, J. R. L., Chitta, V. A., Abramof, E., Silva, A. Ferreira da, Leite, J. R., Tabata, A., As, D. J., Frey, T., …

MRS-Materials Research Society
12 国際会議録 Epitaxial growth and properties of cubic group-III nitride layers

Schikora,D., Schottger,B., As,D.J., Lischka,K.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12