Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes

Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes

著者名:

掲載資料名:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

572

発行年:

1999

開始ページ:

141

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

言語:

英語

請求記号:

M23500/572

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018972
シリーズID:	PA00000011
会議名:	Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 : Symposium
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.08

類似資料:

1 国際会議録 Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode H.J. Jung, S.B. Yun, I.H. Kang, J.H. Moon, W.J. Kim Trans Tech Publications	7 国際会議録 Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures K.H. Kim, Y.H. Kang, J.H. Lee, E.S. Jung, I.H. Kang Trans Tech Publications
2 国際会議録 A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode S.S. Kyoung, E.S. Jung, T.Y. Kang, C.H. Yang, M.Y. Sung Trans Tech Publications	8 国際会議録 Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics W. Bahng, H.J. Cheong, I.H. Kang, S.J. Kim, S.C. Kim, S.J. Joo, N.K. Kim Trans Tech Publications
3 国際会議録 Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments Kim, D.H., Na, H.J., Jung, S.Y., Song, I.B., Um, M.Y., Song, H.K., Jeong, J.K., Lee, J.B., Kim, H.J. Trans Tech Publications	9 国際会議録 EFFECTS OF INTERFACES ON THE a-Si:H SCHOTTKY BARRIER CHARACTERISTICS Li, Y. M., Malone, C., Kumar, S., Wronski, C. R., Nguyen, H. V., Collins, R W. Materials Research Society
4 国際会議録 Effects of Interface Structure on the Electrical Characteristics of PtSi-Si Schottky Barrier Contacts Tsaur, B. -Y., Silversmith, D. J., Mountain, R. W., Anderson Jr., C. H. North-Holland	10 国際会議録 Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles M.S. Kang, J.H. Lee, A. Hallén, C.M. Zetterling, W. Bahng Trans Tech Publications
5 国際会議録 Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation … I.H. Kang, J.Y. Song, S.J. Joo, W. Bahng, S.C. Kim Trans Tech Publications	11 国際会議録 Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics S. Yang, Q.W. Song, X.Y. Tang, Y.M. Zhang, H. Yuan, Q.J. Sun Trans Tech Publications
6 国際会議録 Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode I.H. Kang, W. Bahng, S.J. Joo, S.C. Kim, N.K. Kim Trans Tech Publications	12 国際会議録 4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts D. Perrone, M. Naretto, S. Ferrero, L. Scaltrito, C.F. Pirri Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12