Growth of GaN on Thin Si{111} Layers Bonded to Si{100} Substrates

Growth of GaN on Thin Si{111} Layers Bonded to Si{100} Substrates

著者名:

掲載資料名:

III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

535

発行年:

1999

開始ページ:

101

出版情報:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994416 [1558994416]

言語:

英語

請求記号:

M23500/535

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018919
シリーズID:	PA00000011
会議名:	Symposium on II-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.03

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