Theory of Critical Layer Thickness of Nonconstant Quantum-Well Width Produced by Interdiffusion and Its Optoelectronics Consequence

Theory of Critical Layer Thickness of Nonconstant Quantum-Well Width Produced by Interdiffusion and Its Optoelectronics Consequence

著者名:

掲載資料名:

Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

484

発行年:

1998

開始ページ:

425

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993891 [1558993894]

言語:

英語

請求記号:

M23500/484

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018914
シリーズID:	PA00000011
会議名:	Symposium on infrared applications of semiconductors
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.04

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