Properties of H, O and C in GaN | 東京工業大学附属図書館文献データベース

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Properties of H, O and C in GaN

著者名:

Abernathy, C. R.

MacKenzie, J. D.

さらに 5 件

掲載資料名:

Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

421

発行年:

1996

開始ページ:

347

出版情報:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993242 [155899324X]

言語:

英語

請求記号:

M23500/421

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018908
シリーズID:	PA00000011
会議名:	Symposium on compound semiconductor electronics and photonics
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.10

類似資料:

1 国際会議録 Role of C. O and H in III-Nitrides Abernathy, C. R., Pearton, S. J., Mackenzie, J. D., Lee, J. W., Vartuli, C. B., Wilson, R. G., Shul, R. J., Zolper, J. … MRS - Materials Research Society	7 国際会議録 Dry Etch Damage in InN, InGaN and InAlN Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., … MRS - Materials Research Society
2 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society	8 国際会議録 Plasma Damage Effects in InAlN Field-Effect Transistors Ren, F., Lothian, J. R., Chen, Y. K., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Vartuli, C. B., Lee, J. W., … MRS - Materials Research Society
3 国際会議録 Hydrogen Incorporation into III-V Nitrides During Processing Pearton, S.J., Shul, R.J., Wilson, R.G., Ren, F., Zavada, J.M., Abernathy, C.R., Vartuli, C.B., Lee, J.W., Mileham, … Electrochemical Society	9 国際会議録 Er-Doping of GaN and Related Alloys Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Schwartz, R. N., Wilson, R. G., Zavada, J. M., Shul, R. J. MRS - Materials Research Society
4 国際会議録 Chemical Etching of AlN and InAlN in KOH Solutions Vartuli, C. B., Lee, J. W., MacKenzie, J. D., Pearton, S. J., Abernathy, C. R., Zolper, J. C., Shul, R. J., Ren, F. MRS - Materials Research Society	10 国際会議録 W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN Vartuli, C. B., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Shul, R. J., Zolper, J. C., Lovejoy, M. L., Baca, A. … MRS - Materials Research Society
5 国際会議録 Rapid Thermal Processing of III-Nitrides Hong, J., Lee, J. W., Vartuli, C. B., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Crockett, R. V., Pearton, S. … MRS - Materials Research Society	11 国際会議録 Dielectrics for GaN-Based MIS Diodes Ren, F., Abernathy, C. R., MacKenzie, J. D., Gila, B. P., Pearton, S. J., Hong, M., Macos, M., Schurman, M. J., Baca, A. … MRS - Materials Research Society
6 国際会議録 Hydrogen Diffusion and Passivation in InGaAlN Alloys Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Vartuli, C. B., Wilson, R. G., Zavada, J. M., Shul, R. J. MRS - Materials Research Society	12 国際会議録 Comparison of ICI and Ibr for Dry Etching of III-Nitrides Vartuli, C. B., Lee, J. W., MacKenzie, J. D., Pearton, S. J., Abernathy, C. R., Shul, R. J. MRS - Materials Research Society

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