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Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications

著者名:
掲載資料名:
Microelectronic Device and Multilevel Interconnection Technology II
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
2875
発行年:
1996
開始ページ:
188
終了ページ:
200
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819422736 [0819422738]
言語:
英語
請求記号:
P63600/2875
資料種別:
国際会議録

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