Use of elevated source/drain structure in sub-0.1-ｦﾌm NMOSFETs

Use of elevated source/drain structure in sub-0.1-ｦﾌm NMOSFETs

著者名:

Sun,J.J. ( North Carolina State Univ. )
Tsai,J.-Y.
Yee,K.F.
Osburn,C.M.

掲載資料名:

Microelectronic Device and Multilevel Interconnection Technology II

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2875

発行年:

1996

開始ページ:

178

終了ページ:

185

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819422736 [0819422738]

言語:

英語

請求記号:

P63600/2875

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018883
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic Device and Multilevel Interconnection Technology
回次:	1996 : 2nd
会議開催地:	Austin, TX, USA
会議開催年:	1996.10.16-1996.10.17

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