Defects in as-grown silicon and their evolution during beat treatments
- 著者名:
Vanhellemont,J. Doruberger,E. Esfandyari,J. Kissinger,G. Trauwaert,M.-A. Bender,H. Graf,D. Lambert,U. Ammon,W.von - 掲載資料名:
- Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 258-263
- 発行年:
- 1997
- 巻:
- Part1
- 開始ページ:
- 341
- 終了ページ:
- 346
- 出版情報:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497874 [0878497870]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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10
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Verification of a Method to Detect Grown-in Oxide Precipitate Nuclei in Czochralski Silicon
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