The role of non-radiative defects in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy
- 著者名:
Buyanova,I.A. Chen,W.M. Pozina,G. Monemar,B. Ni,W.X. Hansson,G.V. - 掲載資料名:
- Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 258-263
- 発行年:
- 1997
- 巻:
- Part1
- 開始ページ:
- 139
- 終了ページ:
- 144
- 出版情報:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497874 [0878497870]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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