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Lattiee defects in Si1-xGex epitaxial diodes induced by 20-MeV alpha rays

著者名:
Ohyama,H.
Vanhellemont,J.
Simoen,E.
Claeys,C.
Takami,Y.
Hayama,K.
Sunaga,H.
Poortmans,J.
Caymax,M.
さらに 4 件
掲載資料名:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
シリーズ名:
Materials science forum
シリーズ巻号:
258-263
発行年:
1997
巻:
Part1
開始ページ:
121
終了ページ:
126
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497874 [0878497870]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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