Acceptor states in boron doped SiGe quantum wells
- 著者名:
Schmalz,K. Kagan,M.S. Altukhov,I.V. Korolev,K.A. Orlov,D.V. Sinis,V.P. Tomas,S.G. Wang,K.L. Yassievich,I.N. - 掲載資料名:
- Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 258-263
- 発行年:
- 1997
- 巻:
- Part1
- 開始ページ:
- 91
- 終了ページ:
- 96
- 出版情報:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497874 [0878497870]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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9
国際会議録
Resonant Acceptor States and Stimulated THz Emission in Semiconductors and Semiconductor Structures
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