Heavy p-type doping of ZnSe-based II-VI semiconductors using an excimer laser
- 著者名:
- Hatanaka,Y. ( Shizuoka Univ.(Japan) )
- Aoki,T. ( Shizuoka Univ.(Japan) )
- Niraula,M. ( Shizuoka Univ.(Japan) )
- Aoki,Y. ( Shizuoka Univ.(Japan) )
- Nakanishi,Y. ( Shizuoka Univ.(Japan) )
- 掲載資料名:
- Physics and Simulation of Optoelectronic Devices VI
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3283
- 発行年:
- 1998
- 巻:
- Part 1
- 開始ページ:
- 79
- 終了ページ:
- 86
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819427229 [0819427225]
- 言語:
- 英語
- 請求記号:
- P63600/3283
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
Electrochemical Society |
Society of Photo-optical Instrumentation Engineers |
SPIE - The International Society for Optical Engineering |
12
国際会議録
Heavily Arsenic Doping into Si by ArF Excimer Laser Irradiation using Tertiarybutylarsine(tBAS)
Trans Tech Publications |