Concentration and Depth Measurements of Boron in Semiconductor Materials Using Neutron Depth Profiling

Concentration and Depth Measurements of Boron in Semiconductor Materials Using Neutron Depth Profiling

著者名:

掲載資料名:

Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3322

発行年:

1997

開始ページ:

458

終了ページ:

469

出版情報:

Pennington, NJ: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427656 [0819427659]

言語:

英語

請求記号:

P63600/3322

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018778
シリーズID:	PA00000029
会議名:	Symposium on Diagnostic Techniques for Semiconductor Materials and Devices
回次:	1997
会議開催地:	Montréal, QC, Canada
会議開催年:	1997.05.06-1997.05.08

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