Influence of Various Factors on the COP-Related Gate Oxide Integrity Degradation of Si Wafers

Influence of Various Factors on the COP-Related Gate Oxide Integrity Degradation of Si Wafers

著者名:

掲載資料名:

Analytical and diagnostic techniques for semiconductor materials, devices and processes : joint proceedings of the symposia on ALTECH 99, satellite symposium to ESSDERC 99, Leuven, Belgium [and] the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3895

発行年:

1999

開始ページ:

477

終了ページ:

486

出版情報:

Pennington, N.J.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434975 [0819434973]

言語:

英語

請求記号:

P63600/3895

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018561
シリーズID:	PA00000029
会議名:	ALTECH ; ESSDERC ; Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices
回次:	1999
会議開催地:	Leuven, Belgium
会議開催年:	1999.00.00

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2 国際会議録 Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity Imafuku, D., Mizubayashi, W., Miyazaki, S., Hirose, M., Wakayama, Y., Kobayashi, S. MRS - Materials Research Society	8 国際会議録 Crystal originated particles (COPs), bulk defects including the OSF ring, gate oxide integrity (GOI), and DRAM yield Rozgonyi, G., Tamatsuka, M., Bae, K.-M., Gonzales, F. Electrochemical Society
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