Modeling of PVT growth of bulk SiC crystals: General trends and 2" to 4" reactor scaling

Modeling of PVT growth of bulk SiC crystals: General trends and 2" to 4" reactor scaling

著者名:

Ramm, M. S.

掲載資料名:

New methods, mechanisms and models of vapor deposition : symposium held April 24-26, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

616

発行年:

2000

開始ページ:

227

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995246 [1558995242]

言語:

英語

請求記号:

M23500/616

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018509
シリーズID:	PA00000011
会議名:	New Methods, Mechanisms and models of Vvapor Deposition : Symposium
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.26

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