Computational experiment of CVD of SiC: Growth rate, C/Si ratio, parasitic phase formation | 東京工業大学附属図書館文献データベース

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Computational experiment of CVD of SiC: Growth rate, C/Si ratio, parasitic phase formation

著者名:

Vorob'ev, Andrei N.

Komissarov, Alexandre E.

Bogdanov, Maxim V.

Karpov, Sergey Yu.

Zhmakin, Alexandre I.

Lovtsus, Andrei A.

Makarov, Yuri N.

さらに 3 件

掲載資料名:

New methods, mechanisms and models of vapor deposition : symposium held April 24-26, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

616

発行年:

2000

開始ページ:

165

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995246 [1558995242]

言語:

英語

請求記号:

M23500/616

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018509
シリーズID:	PA00000011
会議名:	New Methods, Mechanisms and models of Vvapor Deposition : Symposium
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.26

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1 国際会議録 Inverse-Computation Design of a SiC Bulk Crystal Growth System Kulik, Alexey V., Demina, Sventlana E., Kochuguev, Sergey K., Ofengeim, Dmitry Kh., Karpov, Sergey Yu., Vorob'ev, Andrey … Materials Research Society	7 国際会議録 Modeling Analysis of SiC CVD in the Horizontal Hot Wall Reactors Semennikov, A.K., Talalaev, R.A., Vorob'ev, A.N., Makarov, Yu.N. Electrochemical Society
2 国際会議録 Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor Vorob'ev, A.N., Bogdanov, M.V., Komissarov, A.E., Karpov, S.Yu., Bord, O.V., Lovtsus, A.A., Makarov, Yu.N. Trans Tech Publications	8 国際会議録 Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling Y. Shishkin, R.L. Myers-Ward, S.E. Saddow, A. Galyukov, A. Vorob'ev, D. Brovin, D. Bazarevskiy, R. Talalaev, Y.N. … Trans Tech Publications
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