CHARACTERIZATION OF GALLIUM NITRIDE GROWN ON (0001) SAPPHIRE BY PLASMA-ENHANCED ATOMIC LAYER EPITAXY
- 著者名:
- 掲載資料名:
- Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 326
- 発行年:
- 1994
- 開始ページ:
- 347
- 出版情報:
- Pittsburgh: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992252 [1558992251]
- 言語:
- 英語
- 請求記号:
- M23500/326
- 資料種別:
- 国際会議録
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