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INFLUENCE OF GROWTH TEMPERATURE ON ORDERING IN InGaAs GROWN ON (001) InP USING TERTIARYBUTYLARSINE SOURCE MOCVD

著者名:
掲載資料名:
Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
326
発行年:
1994
開始ページ:
287
出版情報:
Pittsburgh: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992252 [1558992251]
言語:
英語
請求記号:
M23500/326
資料種別:
国際会議録

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