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CHARACTERIZATION OF InGaAs/InP EPITAXIAL LAYERS GROWN OVER V-GROOVE PATTERNED InP SUBSTRATES USING GAS SOURCE MOLECULAR BEAM EPITAXY

著者名:
Bulitka, N. J.
Gupta, A.
Robinson, B. J.
Thompson, D. A.
Weatherly, G. C.
Simmons, J. G.
さらに 1 件
掲載資料名:
Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
326
発行年:
1994
開始ページ:
39
出版情報:
Pittsburgh: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992252 [1558992251]
言語:
英語
請求記号:
M23500/326
資料種別:
国際会議録

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