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DEFECT PAIR FORMATION BY IMPLANTATION-INDUCED STRESSES IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

著者名:
掲載資料名:
Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
316
発行年:
1994
開始ページ:
753
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992153 [1558992154]
言語:
英語
請求記号:
M23500/316
資料種別:
国際会議録

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