Blank Cover Image

IN-SITU CONTROL OF WAFER CHARGE NEUTRALIZATION DURING HIGH CURRENT ION IMPLANTS

著者名:
掲載資料名:
Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
316
発行年:
1994
開始ページ:
633
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992153 [1558992154]
言語:
英語
請求記号:
M23500/316
資料種別:
国際会議録

類似資料:

1 国際会議録 *CHARACTERIZATION AND CONTROL OF WAFER CHARGING EFFECTS DURING HIGH-CURRENT ION IMPLANTATION

Current, M.I., Lucaszek, W., Dixon, W., Vella, M.C., Messick, C., Shideler, J., Reno, S.

Electrochemical Society
7 国際会議録 Lithography rework reduction and improved process control using AIM targets on aluminum layers in the high-volume production of 110-nm DRAM devices [6152-86]

Hofmann, D., Rabe, F, Avrahamov, Y, Sparka, C

SPIE - The International Society of Optical Engineering
2 国際会議録 IN-SITU TEM OBSERVATION OF DEFECTS AND AMORPHOUS PHASE IN Si WAFER DURING ION IMPLANTATION

Shigenaka, Naoto, Hashimoto, Tuneyuki, Fuse, Motomasa, Owada, Nobuo, Yamaguchi, Hizuru, Ozono, Seiko

Materials Research Society
8 国際会議録 IN-SITU REFLECTANCE MEASUREMENTS OF SEMICONDUCTORS DURING ION IMPLANTATION

Swart, Pieter L., Macquet,. Bea M., Grobler, Michael F.

Materials Research Society
3 国際会議録 DAMAGE AND IN-SITU ANNEALING DURING ION IMPLANTATION

Sadana, D. K., Washburn, J., Byrne, P. F., Cheung, N. W.

North-Holland
9 国際会議録 10 Device Study of Source/Drain Extension and Halo Formation Using a Single-Wafer, High-Current Implanter

Felch, S. B., Food, M. A., Olsen, C., Nouri, F., Matsunaga, Y., Natsuaki, N.

Electrochemical Society
4 国際会議録 In Situ Spectroscopy of Ion-Induced Photon Emission During Metal Nanoparticle Formation in Silica Glass With High-Flux Cu- Implantation

Lay, T. T., Amekura, H., Takeda, Y., Kishimoto, N.

MRS - Materials Research Society
10 国際会議録 HIGH CURRENT DENSITY IMPLANTATION AND ION BEAM ANNELAING IN Si

Holland, O. W, Narayan, J.

North-Holland
5 国際会議録 Conductivity Control of SiC by In-Situ Doping and Ion Implantation

Kimoto,T., Itoh,A., Inoue,N., Takemura,O., Yamamoto,T., Nakajima,T., Matsunami,H.

Trans Tech Publications
11 国際会議録 Charge Carrier Lifetime Modification in Silicon by High Energy H+,He+ Ion Implantation

Khanh,N.Q., Tutto,P., Jaroli,E.N., Buiu,O., Biro,L.P., Paszti,F., Mohacsy,T., Kovacsics,C., Manuaba,A., Gyulai,J.

Trans Tech Publications
6 国際会議録 High-Current Implantation of Negative Copper Ions Into Silica Glasses

Kishimoto, N., Gritsyna, V. T., Kono, K., Amekura, H., Saito, T.

MRS - Materials Research Society
12 国際会議録 THE CHARGE STATE OF IRON IONS IMPLANTED INTO SAPPHIRE

McHargue, C. J., Sklad, P. S., White, C. W., Farlow, G. C., Perez, A., Kornilios, N., Marest, G.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12