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Impact of the Ge Content on the Radiation Hardness of Heterojunction Diodes in SiGe Strained Layers

著者名:
Ohyama, H.
Simoen, E.
Claeys, C.
Takami, Y.
Hayama, K.
Hakata, T.
Tokuyama, J.
Kobayashi, K.
Sunaga, H.
Poortmans, J.
Caymax, M.
さらに 6 件
掲載資料名:
Epitaxy and applications of si-based heterostructures : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
533
発行年:
1998
開始ページ:
99
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994393 [1558994394]
言語:
英語
請求記号:
M23500/533
資料種別:
国際会議録

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