Uniformity, High-Temperature Performance and Reliability of X-band Nitride Power HEMTs Fabricated From 2-Inch Epitaxy
- 著者名:
Hickman, R. Hove, J. M. Van Chow, P. P. Klaassen, J. J. Wowchack, A. M. Polley, C. J. - 掲載資料名:
- Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 483
- 発行年:
- 1998
- 開始ページ:
- 405
- 出版情報:
- Warrendale, Penn.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993884 [1558993886]
- 言語:
- 英語
- 請求記号:
- M23500/483
- 資料種別:
- 国際会議録
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