Breakdown Degradation Associated With Elementary Screw Dislocations in 4H-SiC p+n Junction Rectifiers
- 著者名:
- 掲載資料名:
- Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 483
- 発行年:
- 1998
- 開始ページ:
- 285
- 出版情報:
- Warrendale, Penn.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993884 [1558993886]
- 言語:
- 英語
- 請求記号:
- M23500/483
- 資料種別:
- 国際会議録
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